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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3514 description high collector-emitter breakdown voltage- : v (br)ceo = 180v(min) good linearity of h fe complement to type 2sa1383 applications adudio frequency power amplifier absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 180 v v ceo collector-emitter voltage 180 v v ebo emitter-base voltage 5.0 v i c collector current-continuous 0.1 a collector power dissipation@ t a =25 1.5 p c collector power dissipation@t c =25 10 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3514 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = 50ma; i b = 5ma 0.5 v v be( sat ) base-emitter saturation voltage i c = 50ma; i b = 5ma 1.5 v i cbo collector cutoff current v cb = 180v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 3.0v; i c =0 1.0 a h fe-1 dc current cain i c = 1ma; v ce = 5v 90 h fe-2 dc current cain i c = 10ma; v ce = 5v 100 320 f t current-gain?bandwidth product i c = 20ma; v ce = 10v 200 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 3.2 pf ? h fe- 2 classifications q p 100-200 160-320 isc website www.iscsemi.cn 2 |
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